| Customization: | Available |
|---|---|
| CAS No.: | 1314-61-0 |
| Formula: | Ta2o5 |
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| Product name | Tantalum oxide(Ta2O5) | |||
| CAS No | 1314-61-0 | |||
| Batch No. | 20230910-6 | Quantity | 100.00kg | |
| Date of manufacturing: | Sep. 10, 2023 | Date of test | Sep 10, 2023 | |
| Test Item | Standard | Result | ||
| Ta2O5 (%) | ≥99.99 | 99.99 | ||
| Nb (ppm) | ≤10 | 4.1 | ||
| Al (ppm) | ≤4 | <0.5 | ||
| As (ppm) | ≤1 | <0.5 | ||
| B (ppm) | ≤1 | <1 | ||
| Bi (ppm) | ≤2 | <0.5 | ||
| Ca (ppm) | ≤5 | <1 | ||
| Co (ppm) | ≤1 | <0.1 | ||
| Cr (ppm) | ≤3 | <0.5 | ||
| Cu (ppm) | ≤3 | <0.5 | ||
| Fe (ppm) | ≤5 | 1.5 | ||
| K (ppm) | ≤5 | <2 | ||
| Mg (ppm) | ≤3 | 0.5 | ||
| Mn (ppm) | ≤2 | 0.1 | ||
| Mo (ppm) | ≤2 | 0.1 | ||
| Na (ppm) | ≤10 | 2.3 | ||
| Ni (ppm) | ≤3 | <0.5 | ||
| Pb (ppm) | ≤3 | <0.5 | ||
| Sb (ppm) | ≤10 | <1 | ||
| Sn (ppm) | ≤1 | <0.5 | ||
| Ti (ppm) | ≤1 | <0.5 | ||
| V (ppm) | ≤1 | <0.1 | ||
| W (ppm) | ≤5 | <0.5 | ||
| Zr (ppm) | ≤1 | 0.1 | ||
| F (ppm) | ≤70 | <10 | ||
| Si (ppm) | ≤13 | <10 | ||
| D50(μm) | ≤3 | 2.07 | ||
| Conclusion | Conform | |||
Application:
In electronics Owing to its high band gap and dielectric constant, Ta2O5 Tantalum Oxide has found a variety of uses in electronics, particularly in tantalum capacitors. These are used in automotive electronics, cell phones, and pagers, electronic circuitry; thin-film components; and high-speed tools. In the 1990s, interest grew in the use of tantalum oxide as a high-k dielectric for DRAM capacitor applications., It is used in on-chip metal-insulator-metal capacitors for high frequency CMOS integrated circuits. Tantalum oxide may have applications as the charge trapping layer for Non-volatile memories., There are applications of tantalum oxide in resistive switching memories.
Other uses Due to its high refractive index, Tantalum Oxide has been utilized in the fabrication of the glass of photographic lenses.
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